triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information august 9, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 30 ghz 5-bit phase shifte r TGP2100-EPU key features and performance ? positive control voltage ? single-ended logic ? cmos compatible ? frequency range: 28 - 32 ghz ? 0.25m phemt 3mi technology ? chip dimensions: 1.88 x 0.75 x 0.1 mm (0.074 x 0.030 x 0.004 inches) preliminary measured performance -20 -15 -10 -5 0 5 10 15 20 1 3 5 7 9 1113151719212325272931 state phase error (deg) 28ghz 29ghz 30ghz 31ghz 32ghz 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 frequency (ghz) rms phase shift error (deg) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 rms amplitude error (db) rms phase shift error rms amplitude error
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information august 9, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGP2100-EPU table i maximum ratings symbol parameter value notes v c control voltage range 0 - +8 v 1/ 2 / i d control supply current 1 ma 1/ 2 / p in input continuous wave power 20 dbm 1/ 2 / p d power dissipation 0.1 w 1/ 2 / t ch operating channel temperature 150 0 c 3/ t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device 2/ combinations of supply voltage, s upply current, input power, and output power shall not exceed p d at a package base temperature of 70 c 3/ junction operating te mperature will directly affe ct the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information august 9, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGP2100-EPU preliminary measured data 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 frequency (ghz) rms phase shift error (deg) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 rms amplitude error (db) rms phase shift error rms amplitude error -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 28 29 30 31 32 frequency (ghz) s21 (db)
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information august 9, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGP2100-EPU preliminary measured data -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 28 29 30 31 32 frequency (ghz) s11 (db) -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 28 29 30 31 32 frequency (ghz) s22 (db)
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information august 9, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGP2100-EPU preliminary measured data -20 -15 -10 -5 0 5 10 15 20 135791113151719212325272931 state phase error (deg) 28ghz 29ghz 30ghz 31ghz 32ghz -5 -4 -3 -2 -1 0 1 2 3 4 5 1 3 5 7 9 1113151719212325272931 state amplitude error (db) 28ghz 29ghz 30ghz 31ghz 32ghz
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information august 9, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGP2100-EPU state table state v -supply v -11.25 v -22.5 v -45 v -90 v -180 phase shift 0 +5v 0v 0v 0v 0v 0v reference 1 +5v +5v 0v 0v 0v 0v 11.25 2 +5v 0v +5v 0v 0v 0v 22.5 3 +5v +5v +5v 0v 0v 0v 33.75 4 +5v 0v 0v +5v 0v 0v 45 5 +5v +5v 0v +5v 0v 0v 56.25 6 +5v 0v +5v +5v 0v 0v 67.5 7 +5v +5v +5v +5v 0v 0v 78.75 8 +5v 0v 0v 0v +5v 0v 90 9 +5v +5v 0v 0v +5v 0v 101.25 10+5v0v+5v0v+5v0v112.5 11 +5v +5v +5v 0v +5v 0v 123.75 12+5v0v 0v+5v+5v0v 135 13 +5v +5v 0v +5v +5v 0v 146.25 14 +5v 0v +5v +5v +5v 0v 157.5 15 +5v +5v +5v +5v +5v 0v 168.75 16 +5v 0v 0v 0v 0v +5v 180 17 +5v +5v 0v 0v 0v +5v 191.25 18 +5v 0v +5v 0v 0v +5v 202.5 19 +5v +5v +5v 0v 0v +5v 213.75 20 +5v 0v 0v +5v 0v +5v 225 21 +5v +5v 0v +5v 0v +5v 236.25 22+5v0v+5v+5v0v+5v247.5 23 +5v +5v +5v +5v 0v +5v 258.75 24+5v0v0v0v+5v+5v270 25 +5v +5v 0v 0v +5v +5v 281.25 26 +5v 0v +5v 0v +5v +5v 292.5 27 +5v +5v +5v 0v +5v +5v 303.75 28 +5v 0v 0v +5v +5v +5v 315 29 +5v +5v 0v +5v +5v +5v 326.25 30 +5v 0v +5v +5v +5v +5v 337.5 31 +5v +5v +5v +5v +5v +5v 348.75
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information august 9, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGP2100-EPU mechanical drawing
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information august 9, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGP2100-EPU chip assembly & bonding diagram
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information august 9, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGP2100-EPU reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c. assembly process notes
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